High Electron Mobility Transistor Market - Forecast (2022 - 2027)
The Global market for High electron mobility transistor is forecast to reach $2.8 billion by 2026, growing at a CAGR of 15.2% from 2021 to 2026. The market growth is attributed to the factors such as rapid industrialisation, technological developments, and growing demand from consumer electronics, automobiles industries and others. One of the first selections for these components is the GaN HEMTs. Active electronic sensor arrays are constructed from GaN-based HEMTs, used for airborne radars, ground-based air defense radars, and naval radar. In a standard DBS receiver, discrete HEMTs are almost often used as the preamplifier, accompanied by one or more GaAs MESFET monolithic microwave integrated circuits (MMICs) including heterostructure FET (Field Effect Transistors) and modulation-doped FET due to their excellent low-noise characteristics. Report Coverage The report: “High electron mobility transistor market – Forecast (2021-2026)”, by IndustryARC covers an in-depth analysis of the f...